DMC25D1UVT-7 parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ FET, MOSFET/ DMC25D1UVT-7

The pictures are for reference only

Brand:

Diodes

Model:

DMC25D1UVT-7

Description:

MOSFET N/P-CH 25V/12V TSOT26

Stock:

2995

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.03

The market price fluctuates. Please consult the customer service for the actual price

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

500mA,3.9A

Drain source voltage (Vdss)

25V,12V

FET Type

N and P Channel

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

0.9nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

27.6pF @ 10V

On resistance (maximum) for different Ids and Vgs

4 Ω @ 400mA,4.5V

Power - maximum

1.3W

Vgs (th) (maximum) for different Ids

1.5V @ 250µA

packing

TR,CT

series

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

SOT-23-6 ,TSOT-23-6

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

DMC25D1UVT-7（FET, MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory2995,Price reference "real-time change" China/Hongkong。 DMC25D1UVT-7 package/specs, Download DMC25D1UVT-7、Datasheet。